| PART |
Description |
Maker |
| NX8312UD-AZ NX8312UD |
NECs 1310 nm InGaAsP MQW DFB TOSA FOR SHORT HAUL 2.5 Gb/s APPLICATION
|
CEL[California Eastern Labs]
|
| NX8562LB31 NX8562 NX8562-AZ NX8562LB279-BA NX8562L |
NECs CW InGaAsP MQW DFB LASER DIODE MODULE FOR DWDM APPLICATION (20 mW MIN)
|
CEL[California Eastern Labs]
|
| NX7313UA-AZ NX7313UA |
NECs 1310 nm InGaAsP MQW FP TOSA FOR GIGABIT ETHERNET APPLICATION
|
CEL[California Eastern Labs]
|
| NX6301SH NX6301SI NX6301SJ NX6301SK NX6301GK NX630 |
1310 nm InGaAsP MQW DFB laser diode for 155 Mb/s and 622 Mb/s applications.
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s AND 622 Mb/s APPLICATIONS
|
NEC
CEL[California Eastern Labs]
|
| NX6509GK-AZ NX6509 NX6509GH-AZ |
NECs 1550 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR LONG HAUL 2.5 Gb/s APPLICATIONS
|
CEL[California Eastern Labs]
|
| NX6406 NX6406GH-AZ NX6406GK-AZ |
NECs 1490 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS 邻舍1490纳米InGaAsP多量子阱激光器激光二极管能为光纤到户无源光网络应用工具包
|
California Eastern Laboratories, Inc.
|
| NX8510UD61 NX8510UD51 NX8510UD53 NX8510UD55 NX8510 |
InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1610 nm.
InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1510 nm.
InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1530 nm.
InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1550 nm.
InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1570 nm.
InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1590 nm.
|
NEC
|
| NX7312UA-AZ NX7312UA |
NECs 1310 nm InGaAsP MQW FP TOSA FOR SHORT HAUL 155 Mb/s and 622 Mb/s APPLICATIONS
|
CEL[California Eastern Labs]
|
| NX8560LJ405-CC NX8560LJ413-CC NX8560LJ630-CC NX856 |
NECs EA MODULATOR INTEGRATED InGaAsP MQW DFB LASER DIODE IN BUTTERFLY PACKAGE WITH GPO CONNECTOR FOR 10 Gb/s DWDM APPLICATIONS
|
CEL[California Eastern Labs]
|
| NX7327BF-AA-AZ NX7327BF-AA |
NECs 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (110 mW MIN)
|
CEL[California Eastern Labs]
|
| NX5307 NX5307EH-AZ NX5307EK-AZ |
NECs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR 2.5 Gb/s INTRA-OFFICE APPLICATION 邻舍1310纳米InGaAsP多量子阱中的FP激光可以为2.5 GB的包装二极管/ s的内部办公应
|
California Eastern Laboratories, Inc.
|
